NGSPICE VDMOS parameters
Name
|
Parameter
|
Units
|
Default
|
Example
|
|---|---|---|---|---|
NCHAN
|
NMOS
|
-
|
default, if not given
|
-
|
PCHAN
|
PMOS
|
required, if PMOS
|
-
|
|
VTO
|
Zero-bias threshold voltage (VT0)
|
V
|
0.0
|
|
KP
|
Transconductance parameter
|
$\frac{A}{V^{2}}$
|
1.0
|
|
LAMBDA
|
Channel length modulation (λ)
|
$\frac{1}{V}$
|
0.0
|
|
THETA
|
Vgs influence on mobility
|
$\frac{1}{V}$
|
0.0
|
|
RD
|
Drain ohmic resistance
|
Ω
|
0.0
|
|
RS
|
Source ohmic resistance
|
Ω
|
0.0
|
|
RG
|
Gate ohmic resistance
|
Ω
|
0.0
|
|
KF
|
Flicker noise coefficient
|
-
|
0.0
|
|
AF
|
Flicker noise exponent
|
-
|
1.0
|
|
TNOM
|
Parameter measurement temperature
|
C
|
27
|
|
RQ
|
Quasi saturation resistance fitting parameter
|
Ω
|
0.0
|
|
VQ
|
Quasi saturation voltage fitting parameter
|
V
|
1.0e-14
|
|
MTRIODE
|
Conductance multiplier in triode region
|
−
|
1.0
|
|
SUBSLOPE
|
slope in the dual parameter subthreshold model
|
-
|
0.0
|
|
SUBSHIFT
|
shift along gate voltage axis in the dual parameter subthreshold model
|
V
|
0.0
|
|
KSUBTHRES
|
slope in the single parameter subthreshold model
|
-
|
0.0
|
|
BV
|
Vds breakdown voltage
|
V
|
∞
|
|
IBV
|
Current at Vds=bv
|
A
|
1.0e-10
|
|
NBV
|
Vds breakdown emission coefficient
|
-
|
1.0
|
|
RDS
|
Drain-source shunt resistance
|
Ω
|
∞
|
|
RB
|
Body diode ohmic resistance
|
Ω
|
0.0
|
|
N
|
Body diode emission coefficient
|
-
|
0.0
|
|
TT
|
Body diode transit time
|
s
|
0.0
|
|
EG
|
Body diode activation energy for temperature effect on IS
|
eV
|
1.11
|
|
XTI
|
Body diode saturation current temperature exponent
|
-
|
||
IS
|
Body diode saturation current
|
A
|
1e-14
|
|
VJ
|
Body diode junction potential
|
V
|
0.8
|
|
FC
|
Body diode coefficient for forward-bias depletion capacitance formula
|
-
|
0.0
|
|
CJO
|
Zero-bias body diode junction capacitance
|
F
|
0.0
|
|
M
|
Body diode grading coefficient
|
-
|
1.0
|
|
CGDMIN
|
Minimum non-linear G-D capacitance
|
F
|
0.0
|
|
CGDMAX
|
Maximum non-linear G-D capacitance
|
F
|
0.0
|
|
A
|
Non-linear Cgd capacitance parameter
|
-
|
1
|
|
CGS
|
Gate-source capacitance
|
F
|
0.0
|