NGSPICE level 1, 2, 3 and 6 parameters
Name
|
Parameter
|
Units
|
Default
|
Example
|
|---|---|---|---|---|
LEVEL
|
Model index
|
-
|
1
|
|
VTO
|
Zero-bias threshold voltage (VT0)
|
V
|
0.0
|
1.0
|
KP
|
Transconductance parameter
|
$\frac{A}{V^{2}}$
|
2.0e-5
|
3.1e-5
|
GAMMA
|
Bulk threshold parameter
|
$\sqrt{V}$
|
0.0
|
0.37
|
PHI
|
Surface potential (U)
|
V
|
0.6
|
0.65
|
LAMBDA
|
Channel length modulation (MOS1 and MOS2 only) (λ)
|
$\frac{1}{V}$
|
0.0
|
0.02
|
RD
|
Drain ohmic resistance
|
Ω
|
0.0
|
1.0
|
RS
|
Source ohmic resistance
|
Ω
|
0.0
|
1.0
|
CBD
|
Zero-bias B-D junction capacitance
|
F
|
0.0
|
20fF
|
CBS
|
Zero-bias B-S junction capacitance
|
F
|
0.0
|
20fF
|
IS
|
Bulk junction saturation current (IS)
|
A
|
1.0e-14
|
1.0e-15
|
PB
|
Bulk junction potential
|
V
|
0.8
|
0.87
|
CGSO
|
Gate-source overlap capacitance per meter channel width
|
$\frac{F}{m}$
|
0.0
|
4.0e-11
|
CGDO
|
Gate-drain overlap capacitance per meter channel width
|
$\frac{F}{m}$
|
0.0
|
4.0e-11
|
CGBO
|
Gate-bulk overlap capacitance per meter channel width
|
$\frac{F}{m}$
|
0.0
|
2.0e-11
|
RSH
|
Drain and source diffusion sheet resistance
|
$\frac{\Omega}{\square}$
|
0.0
|
10
|
CJ
|
Zero-bias bulk junction bottom cap. per sq-meter of junction area
|
$\frac{F}{m^{2}}$
|
0.0
|
2.0e-4
|
MJ
|
Bulk junction bottom grading coeff.
|
-
|
0.5
|
0.5
|
CJSW
|
Zero-bias bulk junction sidewall cap. per meter of junction perimeter
|
$\frac{F}{m}$
|
0.0
|
1.0e-9
|
MJSW
|
Bulk junction sidewall grading coeff.
|
-
|
$\begin{array}{ll}
0.50 & \left. \left( level \right.1 \right) \\
0.33 & \left. \left( level \right.2,3 \right) \\
\end{array}$
|
|
JS
|
Bulk junction saturation current
|
|||
TOX
|
Oxide thickness
|
m
|
1.0e-7
|
1.0e-7
|
NSUB
|
Substrate doping
|
cm−3
|
0.0
|
4.0e15
|
NSS
|
Surface state density
|
cm−2
|
0.0
|
1.0e10
|
NFS
|
Fast surface state density
|
cm−2
|
0.0
|
1.0e10
|
TPG
|
Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
|
-
|
1.0
|
|
XJ
|
Metallurgical junction depth
|
m
|
0.0
|
1M
|
LD
|
Lateral diffusion
|
m
|
0.0
|
0.8M
|
UO
|
Surface mobility
|
$\frac{cm^{2}}{V \cdot sec}$
|
600
|
700
|
UCRIT
|
Critical field for mobility degradation (MOS2 only)
|
$\frac{V}{cm}$
|
1.0e4
|
1.0e4
|
UEXP
|
Critical field exponent in mobility degradation (MOS2 only)
|
-
|
0.0
|
0.1
|
UTRA
|
Transverse field coeff. (mobility) (deleted for MOS2)
|
-
|
0.0
|
0.3
|
VMAX
|
Maximum drift velocity of carriers
|
$\frac{m}{s}$
|
0.0
|
5.0e4
|
NEFF
|
Total channel-charge (fixed and mobile) coefficient (MOS2 only)
|
-
|
1.0
|
5.0
|
KF
|
Flicker noise coefficient
|
-
|
0.0
|
1.0e-26
|
AF
|
Flicker noise exponent
|
-
|
1.0
|
1.2
|
FC
|
Coefficient for forward-bias depletion capacitance formula
|
-
|
0.5
|
|
DELTA
|
Width effect on threshold voltage (MOS2 and MOS3)
|
-
|
0.0
|
1.0
|
THETA
|
Mobility modulation (MOS3 only)
|
$\frac{1}{V}$
|
0.0
|
0.1
|
ETA
|
Static feedback (MOS3 only)
|
-
|
0.0
|
1.0
|
KAPPA
|
Saturation field factor (MOS3 only)
|
-
|
0.2
|
0.5
|
TNOM
|
Parameter measurement temperature
|
C
|
27
|
50
|