This model is described in [2]. The model can express the current characteristics of short-channel MOSFETs at least down to 0.25 (\mu m) channel-length, GaAs FET, and resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 mos level 3 model. The model also enables analytical treatments of circuits in short-channel region and makes up for a missing link between a complicated MOSFET current characteristics and circuit behaviors in the deep submicron region.