This is the newest class of the BSIM family and introduces noise modeling and extrinsic parasitics. BSIM4, as the extension of BSIM3 model, addresses the MOSFET physical effects into sub-100nm regime. It is a physics-based, accurate, scalable, robust and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. It is developed by the BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley (see BSIM4 home page). BSIM4 has a long revision history, which is summarized below.

*) supported in ngspice, using e.g. the version=<version flag> flag in the parameter file.

**) Parallel processing using OpenMP support is available for this model.

Details of any revision are to be found in the Berkeley user's manuals, a pdf download of the most recent edition is to be found here.

We recommend that you use only the most recent BSIM4 model (version 4.8.1), because it contains corrections to all known bugs. To achieve that, change the version parameter in your modelcard files to

VERSION = 4.8.

If no version number is given in the .model card, this (newest) version is selected as the default. The older models will typically not be supported, they are made available for reference only.